姓名:祁菁

						祁菁,女,教授,凝聚态物理硕、博士生导师,材料学、材料物理与化学硕、博士生导师,材料工程专业学位硕士生导师。2018年11月至今担任兰州大学教务处副处长。

教育经历:
1. 2009.08-2011.07,加州大学河滨分校(博士后) 
2. 2002.08-2006.12,兰州大学(理学博士)
3. 1997.08-2000.07,兰州大学(工学硕士)
4. 1993.08-1997.07,兰州大学(工学学士)

工作经历:
1. 2013.05-   现  在  ,兰州大学物理科学与技术学院,教授。
2. 2009.05-2013.05,兰州大学物理科学与技术学院,副教授。
3. 2003.03-2009.05,兰州大学物理科学与技术学院,讲师。
4. 2000.07-2003.03,兰州大学物理科学与技术学院,助教。
					

						1. 半导体材料及器件
2. 能源存储与转换
3. 信息存储材料与器件
 
					
						教学工作:
1. 承担《力学》、《普通物理》、《力热实验》、《电磁学实验》、《光学实验》等课程的教学工作;
2. 指导本科生进行创新创业、君政学者等各类科研项目
毕业优秀本科生:
1. 吕德源( http://nanospin.umn.edu/people/deyuan-lyu),2014级,获挑战杯甘肃省赛区一等奖(2017)、全国二等奖(2017),目前博士就读于明尼苏达大学电子与计算机工程系王建平教授小组(http://www.nanospin.umn.edu/)。

指导研究生:
在读硕士研究生:
1. 白   娜,2016级,本科毕业于宁夏大学,获2018年兰州大学三好学生;
2. 鲁玉兰,2016级,本科毕业于四川师范大学,获2018年兰州大学三好学生,获2018年国家奖学金;
3. 李乃峰,2017级,本科毕业于山西师范大学,负责实验室管理和安全工作;
4. 胡俊杰,2018级,本科毕业于河南师范大学;
5. 王   月,2018级,本科毕业于阜阳师范学院;
6. 郑茂源,2018级,本科毕业于长江大学;
7. 叶思浩,2018级,本科毕业于中国地质大学(武汉)。

毕业硕士研究生:
1. 龙梅,2012级,本科毕业于兰州大学,在读期间负责实验室建设、管理和安全工作;
2. 陈思,2013级,本科毕业于兰州大学,在读期间负责实验室管理和安全工作,就职于京东方光电科技有限公司;
3. 胡聪,2015级,本科毕业于中山大学,在读期间负责实验室管理和安全工作,在读期间获国家奖学金,就职于深圳市华星光电技术有限公司;
4. 徐敏,2015级,本科毕业于西南大学,获2018年甘肃省优秀硕士论文,获2018年兰州大学优秀硕士论文,就职于比亚迪股份有限公司。


					
						课题组论文:
1. Na Bai, Min Xu, Cong Hu, Yaodong Ma, Qi Wang, Deyan He, Jing Qi*, Yingtao Li*, Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device, J. Materials Science in Semiconductor Processing, 91, 246-251 (2019).
2. Yulan Lu, Lijun Su, Jing Qi*, Shulai Lei*, Bao Liu, Qi Zang, Siqi Shi, and Xingbin Yan, A combined DFT and experimental study on the nucleation mechanism of NiO nanodots on grapheme, J. Mater. Chem. A, 6, 13717 (2018).
3. Min Xu, Na Bai, Hong-Xia Li, Cong Hu, Jing Qi*, Xing-Bin Yan*, Synthesis of MXene-supported layered MoS2 with Enhanced Electrochemical Performance for Mg batteries, Chinese Chemical Letters, 29, 1313-1316 (2018). 
4. Min Xu, Shulai Lei, Jing Qi, Qingyun Dou, Lingyang Liu, Yulan Lu, Qing Huang, Siqi Shi, and Xingbin Yan*, Opening Magnesium Storage Capability of Two-Dimensional MXene by Intercalation of Cationic Surfactant, ACS Nano, 12 (4), pp 3733–3740 (2018).
5. Cong Hu, Qi Wang, Shuai Bai, Min Xu, Deyan He, Deyuan Lyu, and Jing Qi*, The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory, Applied Physics Letters, 110, 073501 (2017).
6. Bosen Zhang, Cong Hu, Tianshuang Ren, Bo Wang, Jing Qi*, Qing Zhang, Jian- Guo Zheng, Yan Xin, and Jianlin Liu, Metal/ZnO/MgO/Si/Metal Write-Once-Read- Many-Times Memory, IEEE Transactions On Electron Devices, 63, 3508-3513 (2016).
7. Si Chen, Jiangtao Chen, Jianlin Liu, Jing Qi*, Yuhua Wang*, Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate, Applied Surface Science, 387, 103-108 (2016). 
8. Bo Wang, Tianshuang Ren, Si Chen, Bosen Zhang, Rongfang Zhang, Jing Qi*, Sheng Chu, Jian Huang and Jianlin Liu*, Resistive switching in Ga- and Sb-doped ZnO single nanowire devices, Journal of Materials Chemistry C, 3, 11881-11885 (2015). 
9. Si Chen, Jiangtao Chen, Jianlin Liu, Jing Qi*, Yuhua Wang*, The effect of high-temperature oxygen annealing on field emission from ZnO nanowire arrays, Applied Surface Science, 357, 413-416 (2015).
10. Rongfang Zhang, You Li, Jing Qi* and Daqiang Gao*, Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline, Nanoscale Research Letters, 9, 586 (2014).
11. Mei Long, Haolei Zhou, Daqiang Gao, Cangji Wu, Meng Gao, Jiafeng Shao, Jing Qi*, Room temperature ferromagnetism in Zn0.99La0.01O and pure ZnO nanoparticles, Materials Chemistry and Physics, 145, 510-514 (2014).
12. Jian Huang, Jing Qi, Zonglin Li, Jianlin Liu*, Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications, Nanotechnology, 24, 395203 (2013).
13. Jing Qi*, Mario Olmedo, Jian-Guo Zheng, Jianlin Liu*, Multimode Resistive Switching in Single ZnO Nanoisland System, Scientific Reports, 3, 2405 (2013).
14. Jing Qi*, Jian Huang, Dennis Paul, Jingjian Ren, Sheng Chu, Jianlin Liu*, Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires, Nanoscale, 5, 2651-2654 (2013).
15. Jing Qi*, Qing Zhang, Jianlin Liu, The effect of top contact on ZnO write-once–read-many-times memory, Physica Status Solidi-Rapid Research Letters, 6, 478–480 (2012).
16. Jing Qi*, Mario Olmedo, Jingjian Ren, Ning Zhan, Jianze Zhao, Jian-Guo Zheng, Jianlin Liu*, Resistive Switching in Single Epitaxial ZnO Nanoislands, ACS Nano, 6, 1051-1058 (2012).
17. Jing Qi, Jingjian Ren, Mario Olmedo, Ning Zhan and Jianlin Liu*, Unipolar resistive switching in Au/Cr/Mg0.84Zn0.16O2−δ/p+-Si, Applied Physics A-Materials Science & Processing, 107, 891-897 (2012).
18. Jing Qi*, Qing Zhang, Jian Huang, Jingjian Ren, Mario Olmedo, and Jianlin Liu*, Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage, IEEE Electron Device Letters, 32, 1445 (2011).
19. Daqiang Gao, Jing Zhang, Guijin Yang, Jing Qi, Mingsu Si, and Desheng Xue*, Ferromagnetism Induced by Oxygen Vacancies in Zinc Peroxide Nanoparticles, The Journal of Physical Chemistry C, 115, 16405 (2011).
20. Daqiang Gao, Zhaolong Yang, Jing Zhang, Guijin Yang, Zhonghua Zhu, Jing Qi, Mingsu Si, and Desheng Xue*, Transforming from paramagnetism to room temperature ferromagnetism in CuO by ball milling, AIP Advances, 1, 042168 (2011).
21. Daqiang Gao, Jing Zhang, Guijin Yang, Jinlin Zhang, Zhenhua Shi, Jing Qi, Zhaohui Zhang and Desheng Xue*, Ferromagnetism in ZnO Nanoparticles Induced by Doping of a Nonmagnetic Element: Al, The Journal of Physical Chemistry C, 13477–13481 (2010). 
22. Li Zhang, Shihui Ge*, Yalu Zuo, Juan Wang and Jing Qi, Ferromagnetic properties in undoped and Cr-doped SnO2 nanowires, Scripta Materialia, 63, 953–956 (2010).
23. Jing Qi*, Daqiang Gao, Jinhong Liu, Wenge Yang, QiWang, Jinyuan Zhou, Yinghu Yang,  Jianlin Liu, Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering, Applied Physics A-Materials Science & Processing, 100, 79–82 (2010). (SCI三区,IF2013=1.694)
24. Daqiang Gao, Jing Zhang, Jingyi Zhu, Jing Qi, Zhaohui Zhang, Wenbo Sui, Huigang Shi and Desheng Xue*, Vacancy-Mediated Magnetism in Pure Copper Oxide Nanoparticles, Nanoscale Research Letters, 5, 769–772 (2010). (SCI二区,IF2013=2.481)
25. Jing Qi*, Daqiang Gao, Li Zhang and Yinghu Yang, Room-temperature Ferromagnetism of the Amorphous Cu-doped ZnO thin films, Applied Surface Science, 256, 2507–2508 (2010).
26. Daqiang Gao, Zhaohui Zhang, Junli Fu, Yan Xu, Jing Qi, and Desheng Xue*, Room temperature ferromagnetism of pure ZnO nanoparticles, Journal of Applied Physcis, 105, 113928 (2009).
27. Jing Qi, Yinghu Yang, Li Zhang, Junhong Chi, Daqiang Gao, Desheng Xue*, Room-temperature ferromagnetism in Er-doped ZnO thin films. Scripta Materialia, 60, 289–292 (2009).
28. Jing Qi*, Yang Yang, Deyan He, Polycrystalline silicon-germanium Films Prepared by Aluminum-induced crystallization, Journal of The Electrochemical Society, 155, H903-H908 (2008).
29. Jing Qi*, Yang Yang, and Deyan He, AlCl3-induced Crystallization of Amorphous Silicon Thin Films, Applied Surface Science, 254, 2605-2608 (2008).
30. 祁菁,金 晶,胡海龙,高平奇,袁保和,贺德衍*,H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响,物理学报,55,5959-5963(2006)。Qi Jing, Jin Jing, Hu Hai-long, Gao Ping-Qi, Yuan Bao-He, He De-Yan*, Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4, Acta Phys. Sin., 55, 5959-5963 (2006). 
31. 祁菁,金晶,胡海龙,贺德衍*,Al诱导a-Si:H薄膜的晶化,真空科学与技术,25, 57-60(2005)。Qi Jing, Jin Jing, Hu Hailong, He Deyan*, Al-induced Crystallization of Hydrogenated Amorphous Silicon Films, J. Vac. Sci. Tech. (China) , 25, 57-60 (2005).
32. 胡海龙,彭尚龙,唐泽国,祁菁,贺德衍*,在AAO衬底上制备纳米Si阵列研究,兰州大学学报(自然科学版),43,96-98 (2007)。HU Hai-long,PEN G Shang-long,TANG Ze-guo,QI Jing,HE De-yan*, Preparation of nano-crystalline Si arrays by plasm a enhanced CVD using porous alumina templates, J. Lanzhou University (Natural Science), 43, 96-98 (2007).
33. 王晓强,栗军帅,陈 强,祁菁,尹旻,贺德衍*,电感耦合等离子体CVD低温生长硅薄膜过程中的铝诱导晶化,物理学报,54,269-273(2005)。Wang Xiao-Qiang, Li Jun-Shuai, Chen Qiang, Qi Jing, Yin Min, He De-Yan*, Aluminium-induced crystallization during deposition of silicon films by inductively coupled plasma CVD, Acta Phys. Sin., 54, 269-273 (2005). 
34. Fujia Zhang*, Dejiang Zhang, Jie Zhang, Jing Qi, Yanyun Wang, Fengmin Liu, Runjin Gan, X-ray double crystal diffraction and Raman spectra measurements of AlP/GaP short-period superlattices, Semiconductor Science and Technology, 14,  727-730 (1999). 
					
						部分研究成果被Phys.org、IEEE Spectrum、UCR Today、兰大新闻等新闻媒体正面报道:
1. http://phys.org/news/2013-08-advancing-resistive-memory-portable-electronics.html;
2. http://spectrum.ieee.org/nanoclast/semiconductors/nanotechnology/nanoislands-simplify-structure-of-resistive-memory-devices;
3. http://ucrtoday.ucr.edu/16951;
4. http://news.lzu.edu.cn/c/201203/4a49801935e9c8140135ec5d83a00034.html

					
						课题组学生获奖情况:
1. 硕士研究生白娜获2018年兰州大学三好研究生;
2. 硕士研究生鲁玉兰获2018年兰州大学三好研究生;
3. 硕士研究生鲁玉兰获2018年国家奖学金;
4. 硕士研究生徐敏毕业论文《MXene及其复合材料的镁电池性能研究》获甘肃省2018年优秀硕士学位论文;
5. 硕士研究生徐敏毕业论文《MXene及其复合材料的镁电池性能研究》获兰州大学2018年优秀硕士学位论文;
6. 硕士研究生胡聪获2017年国家奖学金;
7. 本科生汪博、吕德源、蒋雨庭以《ZnO阻变存储特性、机理分析与模拟及应用展示》为题参加第十一届“挑战杯” 甘肃省大学生课外学术科技作品竞赛获一等奖(2017);
8. 本科生汪博、吕德源、蒋雨庭以《ZnO阻变存储特性、机理分析与模拟及应用展示》为题参加第十五届中国银行全国大学生课外学术科技作品竞赛荣获二等奖(2017)。

本人获奖情况:
1. 成果《本科生创新能力培养探索》获兰州大学2017年度教学成果奖二等奖(2017);
2. 兰州大学创新创业项目优秀指导教师三等奖(2016);
3. 兰州大学2015年度“隆基教育教学奖”隆基教学骨干奖;
4. 兰州大学创新创业行动计划优秀指导教师(2010);
5. 主讲课程《力学》获“甘肃省高等学校精品课程”荣誉称号,第二参与(2007);
					
						2016.12 -   现  在 ,《Journal of Nanoscience Letters》,编委。

					
						招生信息:每年在凝聚态物理学、材料学、材料物理与化学招收1-3名学术硕士研究生,1-2名博士研究生。在材料工程招收1-3名专业学位硕士研究生。
热烈欢迎有志于科学研究,并渴望硕、博士期间全面提升自己能力的同学加入我们课题组,相信通过你的努力,我们课题组会许你一个美好的未来!